This RF amplifier electronic project circuit is designed for 525MHz frequency band . This RF amplifier electronic project is based on the RD15HVF1 MOS FET type transistor specifically
designed for VHF/UHF High power amplifiers .
This RD15HVF1 rf amplifier circuit project can provide a maximum High power of 15 watts and a gain power more than 7dB using few external electronic parts . This amplifier circuit project must be powered from a 12 volts dc power supply .
C1 capacitance must have a value of 10uFand must be formed from 2200pf capacitors connected in parallel . C2 capacitor must be formed from two capacitors of 2200pf connected in parallel . C3 capacitance must have a value of 330uF and must be formed from 2200pf capacitors connected in parallel . L1 L2 and L3 coils must be formed from 1.6mm silver plateted copper wire on a diameter of 6mm . L1 must have 4 turns , L2 must have 2 turns and L3 must have 4 turns .
As you can see in schematic circuit , this electronic project based on MOS FET type transistor require few external electronic parts .
designed for VHF/UHF High power amplifiers .
This RD15HVF1 rf amplifier circuit project can provide a maximum High power of 15 watts and a gain power more than 7dB using few external electronic parts . This amplifier circuit project must be powered from a 12 volts dc power supply .
C1 capacitance must have a value of 10uFand must be formed from 2200pf capacitors connected in parallel . C2 capacitor must be formed from two capacitors of 2200pf connected in parallel . C3 capacitance must have a value of 330uF and must be formed from 2200pf capacitors connected in parallel . L1 L2 and L3 coils must be formed from 1.6mm silver plateted copper wire on a diameter of 6mm . L1 must have 4 turns , L2 must have 2 turns and L3 must have 4 turns .
As you can see in schematic circuit , this electronic project based on MOS FET type transistor require few external electronic parts .
